band alignment meaning in Chinese
堤岸线向
Examples
- These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics . among all high - k gate dielectric materials , hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si , biggish constant and reasonable band alignment . our researches focus on hfo2 dielectrics
高k栅介质材料已经被广泛地研究来替代sio _ 2 ，以降低栅泄漏电流和改善可靠性，其中， hfo _ 2由于其较大的介电常数、较大的禁带宽度、与si的导带和价带较大的偏置、以及与si的高的热力学稳定性等特征，被认为是最有希望的替代sio _ 2的栅介质材料之一。